Te-doped cadmium telluride films fabricated by close spaced sublimation

摘要

Te-doped cadmium telluride (CdTe) films were deposited on ITO/glass substrates using the close spaced sublimation (CSS) method. The films were characterized by x-ray diffraction (XRD), the x-ray fixed-quantity (XRF) method, scanning electron microscopy (SEM) and the Hall effect. The XRD and SEM results show that appropriate Te doping would be favourable to the growth of CdTe crystallite. The Hall effect measurements indicate that the conductivity of CdTe films could be dramatically improved by Te doping. The work presented here suggests that p-type doping CdTe films can be produced using this deposition method.