Study on Au diffusion in 0001 undoped wurtzite GaN

摘要

Gold diffusion at 300 ℃ and 400 ℃ in 2 μm thick undoped wurtzite GaN grown by the metal―organic chemical vapour deposition technique has been studied by using secondary ion mass spectroscopy (SIMS) depth profiles. The diffusion coefficients D(300 ℃) = 1.03 x 10~(-15) cm~2 s~(-1) D(400 ℃) = 1.69 x 10~(-14) cm~2 s~(-1) and the activation energy Q = 0.93 eV are obtained. The dominant mechanism of Au diffusion in GaN is probably the diffusion of an impurity by the interstitial mode. Comparison with Au diffusion in other semiconductors is given and discussed.