Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

摘要

InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs) with δ-doped channels and uniformly doped channels are comprehensively studied and demonstrated. From the simulation results, based on a two-dimensional simulator of Atlas, the band diagrams, DC and RF characteristics of studied devices are compared and studied. The better drain current drivability, higher transconductance and microwave performances are obtained in the studied device with δ-doped channel. In addition, experimentally, the DDCHFET with δ-doped quantum well channel is fabricated successfully. Due to the employed InGaAs double δ-doped channel structure and Schottky behaviours of InGaP 'insulator', good DC properties including pinch-off and saturation characteristics, higher and linear transconductance, and good RF properties are obtained. Moreover, the experimental results are consistent with simulated data.