Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

摘要

In this paper, extremely high potential barrier height and gate turn-on voltage in an n~+/p~+~+/p~+ GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n~+/p~+ layer in the gate region, as compared with the conventional n~+/p~+ single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm~(-1) is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.