Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor

摘要

Extremely high potential barrier height and gate turn-on voltage of a novel GaAs field-effect transistor with n+/p+/n+/p+/n double camel-like gate structure are demonstrated. The maximum electric field and potential barrier height of the double camel-like gate are substantially enhanced by the addition of another n+/p+layers in gate region, as compared with the conventional n+/p+/n single camel-like gate. For a 1 x 100 m2 device, a potential barrier height up to 2.741 V is obtained. Experimentally, a high gate turn-on voltage up to + 4.9 V is achieved because two reverse-biased junctions of the double camel-like gate absorb part of positive gate voltage. In addition, the transistor action shows a maximum saturation current of 730 mA/mm and an extrinsic transconductance of 166 mS/mm.