Swift heavy ion-induced interface mixing in In/Sb

摘要

In/Sb is integrated with Si by a process of high energy heavy ion beam mixing. The samples of In/Sb deposited on the Si substrate were irradiated using 100 MeV Au ions having fluences from 1 x 10~(12) to 6 x 10~(13) ions cm~(-2). Phase formation due to ion beam mixing was detected using high-resolution x-ray diffraction measurements. X-ray photoelectron spectroscopy measurements indicated that both In and Sb were embedded in the Si substrate with an irradiation dose of 3 x 10~(13) ions cm~(-2). Formation of InSb phase was observed in the irradiated sample, at a fluence of 1 x 10~(13) ions cm~(-2) and higher, without any post-irradiation annealing.