Crystal damage assessment of Be~+-implanted GaN by UV Raman scattering

摘要

We present resonant UV Raman-scattering measurements on GaN epilayers implanted to different doses of Be~+ ions. The Raman spectra are dominated by outgoing multiphonon resonant Raman lines, the intensity of which is very sensitive to the implantation dose. We discuss the criteria, based on the intensities and widths of the observed lines, which allow one to assess the crystal quality of the implanted samples.