Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

摘要

GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.