METHOD FOR FORMING GaN-BASED NITRIDE LAYER TO REDUCE CRYSTAL ORIGINATED PARTICLE CAUSED BY LATTICE MISMATCH BETWEEN SAPPHIRE SUBSTRATE AND GaN-BASED NITRIDE LAYER

摘要

PURPOSE: A method for forming a GaN-based nitride layer is provided to reduce a crystal originated particle caused by a lattice mismatch between a sapphire substrate and a GaN-based nitride layer by using a SiCN buffer layer. CONSTITUTION: The first layer having a composition of SiaCbNc(c,b0, a=0) is formed on a sapphire substrate(10). The second layer having a composition of Al(x 1)Ga(y1)ln(z1)N(0=x1=1, 0=y1=1, 0=z1=1, x1+y1+z1=1) is formed on the first layer having the composition of SiaCbNc(c,b0, a=0). A nitride layer(12) including a GaN component is formed on the first layer having the composition of SiaCbNc(c,b0, a=0).