机译:界面效应对金属铁电绝缘体半导体场效应晶体管特性的影响
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan 411105,People's Republic of China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University,Ministry of Education, Xiangtan, Hunan 411105, People's Republic of China;
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan 411105,People's Republic of China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University,Ministry of Education, Xiangtan, Hunan 411105, People's Republic of China;
Foreign Languages Department, Hunan Institute of Engineering, Xiangtan, Hunan 411100,People's Republic of China;
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan 411105,People's Republic of China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University,Ministry of Education, Xiangtan, Hunan 411105, People's Republic of China;
机译:退火和硅界面钝化层厚度对In_0.53Ga_0.47As金属氧化物半导体场效应晶体管器件特性的影响
机译:掺氮界面层对氧化han-金属氧化物半导体场效应晶体管瞬态特性的影响
机译:使用Pt / Bi_(3.25)La_(0.75)Ti_3O_(12)/ CeO_2 / Si结构的金属铁电绝缘体半导体场效应晶体管的结构和电性能
机译:失配应变和温度对金属铁电绝缘体半导体场效应晶体管特性的影响
机译:通过接口工程提高有机场效应晶体管的电性能
机译:环境对背栅WSe2场效应晶体管电特性的影响
机译:场效应晶体管:单层六边形氮化硼膜,具有大畴尺寸和清洁界面,用于增强基于石墨烯的场效应晶体管的迁移率(ADV。Mater。10/2014)
机译:In(0.53)Ga(0.47)as / In(0.52)al(0.48)作为调制掺杂场效应晶体管的两步外延实现的性能特征:分子束外延再生的影响