机译:不同阻流层的GaN基发光二极管的可靠性分析
Department of Electronics Engineering, Southern Taiwan University, Tainan 710, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University,Tainan 70101, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University,Tainan 70101, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University,Tainan 70101, Taiwan;
Epistar Corporation, Nitride Device Research and Development Center, Hsin-Shi, Tainan 744, Taiwan;
Epistar Corporation, Nitride Device Research and Development Center, Hsin-Shi, Tainan 744, Taiwan;
机译:具有电流阻挡层和电镀镍衬底的垂直GaN基发光二极管的增强性能
机译:确定具有双降解动力学的GaN基白色发光二极管可靠性特性的因素分析
机译:高性能基于GaN的发光二极管的蓝宝石衬底处理:蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
机译:基于GaN的发光二极管的ESD可靠性分析与策略
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:通过瞥见角度沉积及其应用作为GaN的发光二极管中的缓冲层制备的Zigzag和螺旋Aln层