机译:IC-CAP中用于紧凑型双栅极MOSFET模型的自动参数提取技术
Departament d'Enginyeria Electronica, Electrica I Automatica, Universitat Rovira I Virgili, Spain,AdMOS GmbH Advanced Modeling Solutions, Germany;
AdMOS GmbH Advanced Modeling Solutions, Germany;
AdMOS GmbH Advanced Modeling Solutions, Germany;
Department of Electrical Engineering, CINVESTAV, Av. IPN No. 2508, A.P. 14-740, 07300 Mexico;
Department of Electrical Engineering, CINVESTAV, Av. IPN No. 2508, A.P. 14-740, 07300 Mexico;
Departament d'Enginyeria Electronica, Electrica I Automatica, Universitat Rovira I Virgili, Spain;
机译:双栅极MOSFET栅极漏电流建模的自动参数提取技术
机译:双栅极MOSFET的栅极隧穿漏电流的温度依赖性紧凑模型
机译:纳米级双栅极和全栅MOSFET的紧凑建模解决方案
机译:多栅极MOSFET紧凑模型的全局参数提取
机译:独立双栅极MOSFET的直流参数提取技术。
机译:首要原理的砷和锑双栅极MOSFET的性能
机译:对称双栅MOSFET的紧凑模型,包括载流子限制和短沟道效应