机译:基于AlGaInP的红色整体发光二极管阵列的器件特性和热分析
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea;
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea;
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea;
机译:具有不同芯片阵列的多芯片发光二极管器件的热分析
机译:不同封装类型的GaN基垂直发光二极管的器件特性和热分析
机译:Gan基单片发光二极管阵列的光电和热特性
机译:具有垂直交错面的单片3通道激光二极管阵列的聚焦感测特性
机译:大功率白色发光二极管的热分析。
机译:设计构造和利用发光二极管和发光二极管耦合光纤阵列进行多站点脑光传输的过程
机译:基于AlGaInP的发光二极管阵列的热分析与设计