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The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions

机译:界面状态连续体对半导体异质结阻抗谱的影响

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摘要

A quantitative analysis of the impedance spectroscopy of semiconductor heterojunctions was carried out in the presence of interface state continuum at the heterojunction interface. A comparison of the impedance spectroscopy of semiconductor heterojunctions simulated in the context of the interface state continuum model with that simulated in the scope of the single-level state model was carried and possible misinterpretations were considered. The previously proposed approaches for the determination of the interface-state-related parameters and for the calculation of the actual barrier capacitance (the single-level state model) were modified in order to take into account the effect of interface state continuum.
机译:在异质结界面处存在界面态连续体时,对半导体异质结的阻抗谱进行了定量分析。在界面状态连续体模型的上下文中模拟的半导体异质结的阻抗谱与在单能级状态模型的范围内模拟的异质结的阻抗谱进行了比较,并考虑了可能的误解。为了考虑界面状态连续体的影响,对先前提出的用于确定界面状态相关参数和计算实际势垒电容(单级状态模型)的方法进行了修改。

著录项

  • 来源
    《Semiconductor science and technology》 |2013年第2期|14.1-14.6|共6页
  • 作者

    V V Brus;

  • 作者单位

    Chernivtsi Branch, Frantsevich Institute for Problems of Materials Science of NAS of Ukraine, 58001 Chernivtsi, Ukraine Department of Electronics and Energy Engineering, Chernivtsi National University, 58012 Chernivtsi, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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