SEMICONDUCTOR DEVICE HAVING A HETEROJUNCTION INTERFACE FOR TRANSPORING CARRIERS WITH HIGH SPEED CARRIER MOBILITY

摘要

A heterojunction semiconductor device comprises a semi-insulating substrate (11), a channel layer (13) provided on the substrate for sustaining a two-dimensional carrier gas (15a) therein, a carrier supplying layer (17) of a doped semiconductor material provided on the channel layer, a source electrode (21) provided on the carrier supplying layer, a drain electrode (22) provided on the carrier supplying layer, and a gate electrode (23) provided on the carrier supplying layer. First (14) and second (15) sub-layers have respectively first and second saturation drift velocities of carriers such that the first saturation drift velocity is substantially larger than said second saturation drift velocity. IMAGE IMAGE