Variable range hopping conduction in N-and P-type in situ doped polycrystalline silicon nanowires

摘要

Temperature dependence of electrical properties in N- and P-type in situ doped polycrystalline silicon nanowires synthesized by the sidewall spacer formation technique has been studied. Experimental analysis has been carried out for a temperature range from 200 K to 530 K on in situ doped polycrystalline silicon nanowires with doping level varying from 2 × 10~(16) to 9 × 10~(18) cm~(-3). Results show that for N- and P-type doped samples the temperature dependence of the conductivity follows the 3D variable range hopping model due to hopping between localized electronic states near the Fermi level. The corresponding densities of states are determined following exponential (tail states) distributions associated to the statistical shift of the Fermi level.