机译:选择性掩埋氧化物上的基于高性能电荷等离子体的横向双极晶体管
Department of Electronics and Communication Engineering, Jamia Millia Islamia (Central University), New Delhi 110025, India;
Department of Applied Sciences, Jamia Millia Islamia (Central University), New Delhi 110025, India;
Department of Applied Sciences, Jamia Millia Islamia (Central University), New Delhi 110025, India;
Department of Electrical Engineering, College of Engineering, King Saud University, Riyadh, Saudi Arabia;
Department of Electrical Engineering, College of Engineering, King Saud University, Riyadh, Saudi Arabia;
charge plasma; SOI; breakdown volatge; partial SOI;
机译:使用选择性掩埋氧化物(Selbox)电荷等离子体基连接晶体管降低自热效果
机译:局部掩埋氧化物上高性能横向双极结型晶体管的设计与仿真
机译:具有埋入金属层的垂直双极电荷等离子体晶体管
机译:选择性掩埋氧化物上的高性能横向双极结型晶体管
机译:基于电荷的异质结双极晶体管建模,用于计算机辅助设计应用。
机译:具有埋入金属层的垂直双极电荷等离子体晶体管
机译:一种高频GaInp / Gaas异质结双极晶体管,采用选择性埋入式子集电极,具有降低的基极 - 集电极电容
机译:双极基氧化物中的辐射诱导电荷俘获