机译:肖特基栅极类型和沟道缺陷对透明ZnO MESFET稳定性的影响
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;
School of Applied Sciences, RMIT University, GPO Box 2476 V, Melbourne, VIC 3001, Australia;
School of Applied Sciences, RMIT University, GPO Box 2476 V, Melbourne, VIC 3001, Australia;
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;
ZnO; MESFET; Schottky contact; bias stress; grain boundary; filtered cathodic vacuum arc; TFT;
机译:肖特基栅极(MESFET)在GaAs场效应晶体管中有效通道厚度的光学调制
机译:缺陷分布对由H_2O_2处理的无意掺杂n型ZnO外延层形成的Au / ZnO肖特基接触的输运性能的影响
机译:各种类型的透明导电ZnO和Ga掺杂的ZnO薄膜中载流子中心的热稳定性
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机译:通过共掺杂GA和N增强ZnO透明半导体薄膜的P型传导的电性能和稳定性
机译:Gaas mmIC混频器,用于8-12GHz,基于0.5微米栅极长度的D-mEsFETs。第1卷。设计和布局(Gaas mmIC混频器,8-12GHz,Gerealiseered met 0,5微米栅极冷却D-mEsFET.selel 1. Ontwerp en Layout)。