机译:界面陷阱和体陷阱对LPCVD-SiNx / AlGaN / GaN金属-绝缘体-半导体结构的C-V表征的影响
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Peking Univ, Sch Phys, Beijing 100871, Peoples R China;
Peking Univ, Sch Phys, Beijing 100871, Peoples R China;
Peking Univ, Sch Phys, Beijing 100871, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
AlGaN/GaN; traps; LPCVD-SiNx; MIS-HEMT;
机译:Al_2O_3 / AlN / AlGaN / GaN金属-绝缘体-半导体异质结构中界面俘获截面的俘获截面对活化能的指数依赖性
机译:具有Al2O3,AlN和Al2O3 / AlN叠层电介质的AlGaN / GaN金属-绝缘体-半导体异质结构中界面电荷和体电荷的比较研究
机译:C-V表征AlGaN-GaN异质结构中的陷阱行为
机译:使用依赖于频率和温度的C-V技术映射高性能Al2O3 / AlGaN / GaN MIS异质结构中的界面陷阱
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:alGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的界面态/边界陷阱与阈值电压漂移的相关性