机译:C-V表征AlGaN-GaN异质结构中的陷阱行为
State Key Lab. of Electronic Thin Films and integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China National Key Lab, of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Lab, of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Lab, of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
National Key Lab, of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
State Key Lab. of Electronic Thin Films and integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
National Key Lab, of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
AlGaN/GaN; traps; dispersion; capacitance-voltage; plasma treatment;
机译:用于解释2DEG迁移率相对于N极性和Ga极性AlGaN-GaN异质结构中电荷密度的行为的模型
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机译:使用多频C-V测量和脉冲模式电压应力的GaN HEMT深层浅陷阱的表征
机译:使用依赖于频率和温度的C-V技术映射高性能Al2O3 / AlGaN / GaN MIS异质结构中的界面陷阱
机译:与机组人员相关的14 CFR Part 121航空事故中的行为陷阱。
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机译:界面状态和温度对金属/绝缘体/ AlGaN / GaN异质结构电容器C-V行为的影响