Enhanced drift velocity of photoelectrons in a semiconductor with ultrafast carrier recombination

摘要

It is shown by Monte Carlo simulations that the electron velocity overshoot phenomenon in the transient response causes a significant enhancement of the steady-state electron drift velocity in semiconductors in which the electron recombination time is of the same order as the time of the electron transient response. The effect can take place in GaAs layers grown by molecular beam epitaxy at low temperatures.