Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors

摘要

The layer structures of single and double delta-doped lattice-matched MOCVD-grown modulation-doped field effect transistors (MODFETs) have been characterized by photoluminescence (PL), x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) techniques. MODFET devices are processed and their dc and RF results are reported. At a drain-source bias of 1.25 V, a single delta-doped 0.15 μm MODFET dPvice shows an f_T of 118 GHz and f_max of 265 GHz. Similarly, a double delta-doped 0.15 μm MODFET gives an f_T of 135 GHz and f_max of 140 GHz. The extracted physical parameters of the MODFETs from PL and XRD techniques show excellent correlation with that of the grown devices.