A novel circular double-gate SOI MOSFET with raised source/drain

摘要

In this paper, we report the performance of a novel circular double-gate (CDGT) silicon-on-insulator metal oxide semiconductor field effect transistor (MOSFET). We explore a variety of device configurations that are possible by making changes in the pad height in terms of a raised top, bottom, or top and bottom (both). The results demonstrate that the best device configuration is a raised both CDGT with an internal pad as a drain. For the above configuration, the impact of a junctionless mode is further analyzed and the optimum performance is obtained with a doping level of 1 x 10(18) cm(-3). The device exhibits good electrical characteristics, with an ON/OFF current ratio of 3.73 x 10(5), a near-ideal subthreshold slope of 66.9 mV dec(-1), and a small drain-induced barrier lowering of similar to 35 mV V-1. Among various circular MOSFETs, the CDGT device exhibits an optimum delay performance of 2 ps based on a two-stage inverter analysis.