机译:一种新型GaN垂直接线场效应晶体管,具有本质反向传导能力和千伏击穿电压
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China|Inst Elect & Informat Engn UESTC Guangdong Dongguan 523808 Peoples R China|UESTC Shenzhen Inst Adv Study Shenzhen Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
Univ Elect Sci & Technol China UESTC Chengdu 610054 Peoples R China;
GaN; vertical junction field-effect transistor; reverse conduction; freewheeling diode; high breakdown voltage;
机译:基于界面电荷工程的高击穿电压GaN基垂直场效应晶体管的设计与仿真
机译:具有固有反向导通和低栅极电荷的垂直GaN功率晶体管,可实现高性能功率转换
机译:具有高雪崩能力的4.9 kV击穿电压垂直GaN p-n结二极管
机译:具有本质反向传导能力的新型GaN结场效应晶体管
机译:高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
机译:AlN /蓝宝石模板上的薄沟道AlGaN / GaN高电子迁移率晶体管中的高横向击穿电压
机译:si上的增强型金属 - 绝缘体 - 半导体GaN / alInN / GaN异质结构场效应晶体管,阈值电压为+ 3.0V,阻断电压高于1000V