Validity of the Padovani-Stratton formulas for analysis of reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes

摘要

In this present study, we test the accuracy of the Padovani-Stratton models in terms of the percent error in the barrier height extracted by this model from the reverse characteristics I-V simulated by the Tsu-Esaki model over a range -1000 V at room temperature. The thermionic field emission model without image force barrier lowering is much less accurate for low doping concentration (10(15) cm(-3)), in particular at low reverse bias voltages (-200 V). While the field emission model is less accurate for high doping concentrations (10(17) cm(-3)) in particular for high reverse bias voltages. For medium doping concentration, thermionic field emission or field emission models provide an acceptable accurate for medium and high reverse bias voltages (-100 V), however, it is less accurate at lower reverse bias voltages (-100 V) and the best accuracy is occurred at about 10(16) cm(-3). When the Padovani-Stratton models is combined with image force barrier lowering model, the percent error in extracted barrier height takes large values; hence, it is inaccurate on entire range bias.