Sony Evaluates and Eradicates Plasma Damage

摘要

Optirnization of dielectric etching processes for dual damascene are normally centered around obtaining optimal aspect ratios, profiles, etch rates and etch stop characteristics. However, interconnects also require proper interfaces between the low-k dielectric, barrier materials and the copper, which, to a degree, depends on plasma damage. Therefore, etching and ashing processes must produce as little plasma damage as possible to improve yield and reliability.