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Strip/Cleaning Process Uses Near-Visible Light

机译:剥离/清洁过程使用近可见光

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A new resist strip/wafer cleaning technology has been de-veloped that is "fortunately not intuitively obvious," ac-cording to deyeloper David J. Elliott of UVTech Systems Inc., Wayland, Mass. The technology employs visible light (λ=380-780 nm) with simple gas chemistries to remove contaminants from the wafer surface. What's not intuitively obvious is that most wafer cleaning techniques based on pho-toablation have so far been based on light with much shorter wavelengths, requiring, for example, sophisticated excimer lasers. "The UVTech process uses a different photochemical reaction," said Elliott. "The new process uses only 'green' reactive gases, such as oxygen and ozone, to remove resists and polymer-based residues. The process produces no waste treatable by-products."
机译:据马萨诸塞州韦兰市UVTech Systems Inc.的deyeloper David J. Elliott称,已经开发出一种新的抗蚀剂条/晶片清洗技术,“不幸的是,在直观上并不明显”。该技术采用可见光(λ= 380 -780 nm)具有简单的气体化学作用,以去除晶片表面的污染物。直觉上并不明显的是,到目前为止,大多数基于光消融的晶圆清洁技术都是基于波长短得多的光,例如,需要复杂的准分子激光器。 Elliott说:“ UVTech工艺使用不同的光化学反应。” “新工艺仅使用氧气和臭氧等'绿色'反应气体来去除抗蚀剂和聚合物残留物。该工艺不会产生可处理的废物副产品。”

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