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TSMC VP Discusses 90 nm Interconnect Issues

机译:台积电副总裁讨论90 nm互连问题

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Built-in performance, reliability and manufacturability best describe TSMC's approach to the future, according to Shang-Yi Chiang, senior vice president of R&D at TSMC (Hsinchu, Taiwan), who gave the keynote speech at the International Interconnect Technology Conference (IITC) last month. In his talk, Chiang detailed some of the changes for the 90 nm device generation, but also some of the lessons learned regarding yield ramping and time to market. "You have to find as many resources as you can to solve problems more quickly. The best way to do this is to collaborate with people of different disciplines throughout the whole supply chain, including product design, library/IP, TCAD, technology, equipment and assembly." He emphasized that, without a close collaboration, problems will not be solved in a timely manner and will end up costing the company dearly if prod- ucts cannot be marketed on time.
机译:台积电(台湾新竹)研发高级副总裁蒋尚义表示,内置的性能,可靠性和可制造性最能说明台积电未来的发展方向。他在国际互连技术大会(IITC)上作了主题演讲。上个月。在演讲中,Chiang详细介绍了90纳米器件世代的一些变化,还总结了一些关于提高产量和上市时间的经验教训。 “您必须找到尽可能多的资源来更快地解决问题。做到这一点的最佳方法是与整个供应链中不同学科的人员进行协作,包括产品设计,库/ IP,TCAD,技术,设备和组装。”他强调,没有紧密的合作,问题将无法及时解决,并且如果无法及时销售产品,最终将使公司付出高昂的代价。

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