NiSi FUSI Sets Performance Records

摘要

Dramatic improvements in transistor performance through the use of fully silicided (FUSI) metal gates will be presented at the International Electron Devices Meeting (IEDM), to be held Dec. 5-7 in Washington, D.C. Intel's use of nickel silicide (NiSi) FUSI (Figure) set a new record for drive current. Texas Instruments has also implemented NiSi FUSI gates using a novel integration process. Other work on FUSI gates is slated to be reported by IBM, Toshiba, Philips, IMEC and other companies.