机译:栅极长度为1纳米的MoS2晶体管
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA|Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;
Stanford Univ, Elect Engn, Stanford, CA 94305 USA;
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA;
Stanford Univ, Elect Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA|Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA;
机译:臭氧预处理用于高性能MoS2顶栅晶体管的高K氧化物在MoS2上的集成与厚度相关的载流子散射研究
机译:具有Al2O3 / HFO2的栅极堆叠电介质的顶门和底门多层MOS2晶体管的比较研究
机译:基于SiO2 / MOS2芯壳异质结构实现ω形栅极MOS2场效应晶体管
机译:MOS2晶体管,具有原子级栅极长度:第一个原理研究
机译:栅长短的栅凹氮化镓高电子迁移率晶体管。
机译:基于MoS2纳米圆盘的背栅场效应晶体管的制备和电性能
机译:场效应晶体管:多层MOS2场效应晶体管的阈值电压控制通过十八烷基氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示器(小7/2019)
机译:在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。 (重新公布新的可用性信息)