Piezoresistive effect in p-type polycrystalline diamond films

摘要

The peiezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible for the piezoresistive effect in the p-type polycrystalline diamond films. The gauge-factor calculation formula including the effect of both background scattering and grain-boundary scattering were obtained, and the calculation results are in accordance with the experimental results.