X-ray Spectrometry and Spectrum Image Mapping at Output Count Rates above 100 kHz with a Silicon Drift Detector on a Scanning Electron Microscope

摘要

A third-generation silicon drift detector (SDD) in the form of a silicon multicathode detector (SMCD) was tested as an analytical x-ray spectrometer on a scanning electron microscope. Resolution, output count rate, and spectral quality were examined as a function of the detector peaking time from 8 μs to 250 ns and over a range of input count rate (dead time). The SDD-SMCD (50 mm~2 active area) produced a resolution of 134 eV with a peaking time of 8 μs. The peak width and peak channel were nearly independent of the input count rate (at 8 μs peaking time, the peak width degradation was 0.003 eV/percent dead time and peak position change was -0.7 eV over the dead time range tested). Maximum output count rates as high as 280 kHz were obtained with a 500 ns peaking time (188 eV resolution) and 500 kHz with a 250 ns peaking time (217 eV resolution). X-ray spectrum imaging was achieved with a pixel dwell time as short as 10 ms (with 1.3 ms overhead) in which a 2,048 channel (10 eV/channel) spectrum with 2-byte intensity range was recorded at each pixel (scanned at 128 x 128). With a 220 kHz output count rate, a minor constituent of iron (present at a concentration of 0.04 mass fraction or 4 weight %) in an aluminum-nickel alloy could be readily detected in the x-ray maps derived from the x-ray spectrum image database accumulated in 185 s.