FIELD-EFFECT TRANSISTORS BASED ON COPPER PHTHALOCYANINE

摘要

Field-effect transistors (FETs) have been prepared using thin films of Copper Phthalocyanine (CuPc) as active component. The characteristics of these transistors are studied with positive and negative gate source and drain-source polarisations. The channel conductivity was p-type. A model to obtain the typical characteristics of the drain current versus drain voltage at different gate voltages is presented.