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机译:UV辅助使用铜(Ⅱ)酞菁基有机场效应晶体管的非挥发性存储器行为
Department of Electrical Engineering Indian Institute of Technology Jodhpur Jodhpur Rajasthan 342037 India;
Department of Electronics and Communication Engineering Malaviya National Institute of Technology Jaipur Rajasthan 302017 India;
Department of Electrical Engineering Indian Institute of Technology Jodhpur Jodhpur Rajasthan 342037 India;
Department of Electrical Engineering Indian Institute of Technology Jodhpur Jodhpur Rajasthan 342037 India;
Department of Electrical Engineering Indian Institute of Technology Jodhpur Jodhpur Rajasthan 342037 India;
Department of Electrical Engineering Indian Institute of Technology Jodhpur Jodhpur Rajasthan 342037 India;
Organic field-effect transistors (OFETs); Copper (Ⅱ) phthalocyanine (CuPc); Non-volatile optical memory; Memory window; Photo-illumination; Charge-trapping;
机译:有机溶剂蒸气处理对铜酞菁基机效应晶体管晶体管性能及接触电阻的影响
机译:影响基于有机场效应晶体管的非易失性存储器性能的结构参数
机译:通过基于双极性有机场效应晶体管的聚合物半导体分子掺杂来调整非易失性存储特性
机译:基于铜(II)酞菁的有机场效应晶体管,用于紫外光检测
机译:新型非易失性存储器和拓扑绝缘体场效应晶体管。
机译:高迁移率溶液处理的基于酞菁铜的有机场效应晶体管
机译:高迁移型铜 - 酞菁场效应晶体管,具有四抗静脉钝化层和有机金属触点