Disclosed is a method of monitoring a semiconductor manufacturing process. The method comprises obtaining at least one first trained model being operable to derive local performance parameter data from high reiiolution metrology data, wherein said local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part ot said semiconductor manufacturing process. Local performance parameter data is determined from said high resolution metrology data using said first trained model. The first trained model is operable to determine said local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on said high resolution metrology data comprising only metrology data performed prior to any such etch step.
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