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Improving on-product overlay (OPO) by grouping wafers according to ingot

机译:通过根据晶锭对晶圆进行分组来改善产品覆盖(OPO)

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摘要

In the scanner the height of every wafer (wafer map) is measured using the level sensor which takes several seconds. The problem to solve is: is there a way to skip or shorten wafer map measurements and spend more time on wafer align measurements? Since overlay performance is typically more critical than focus performance, being able to spend more time on measuring wafer alignment marks could be beneficial for on-product overlay performance. Each wafer has an unique ID lasered on the backside, which is used to trace back the wafer to the ingot from which it was cut. This wafer ID is described by SEMF standard M12/M13 and it has the following meaning (for example: CH3ZR 226 SE G4): CH3ZR = Ingot ID, 226 = Position of a wafer within a ingot, SE = Wafer supplier and G4 = Checksum.
机译:在扫描仪中,使用液位传感器测量每个晶圆的高度(晶圆图),这需要几秒钟的时间。要解决的问题是:有没有一种方法可以跳过或缩短晶片图测量,并在晶片对准测量上花费更多时间?由于覆盖性能通常比聚焦性能更为关键,因此能够花费更多时间测量晶圆对准标记可能对产品上的覆盖性能有利。每个晶片的背面都有一个唯一的ID激光,用于将晶片追溯到被切割的晶锭。该晶圆ID由SEMF标准M12 / M13进行描述,并且具有以下含义(例如:CH3ZR 226 SE G4):CH3ZR =锭ID,226 =晶圆在锭中的位置,SE =晶圆供应商,G4 =校验和。

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    《Research Disclosure》 |2019年第657期|41-41|共1页
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  • 入库时间 2022-08-18 03:56:35

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