Optoelectronic properties of a-Si_1-xGe_x: H thin films

摘要

Polycrystalline Si_1-xGe_x alloys with different Ge contents were prepared successfully in evacuated quartz tubes, from which a-Si_1-xGe_x: H thin films were prepared by thermal evapor- ation. Specimens were deposited by varying preparation conditions such as the deposition temperature (T_d), Ge content (x) and dopant concentration of As and Al. the composition of the alloys and films was determined by energy-dispersive spectroscopy (EDS) and electron spectroscopy for chemical analysis (ESCA).