THE IMPACT OF POWERFUL MICROWAVE RADIATION ON SEMICONDUCTOR DIODE STRUCTURES IN MICROWAVE CIRCUITS

摘要

The authors lend theoretical and experimental support to the fact that the impact of powerful microwave radiation on semiconductor diode structures in microwave circuits may cause qualitative changes in their static characteristics. Particularly, it may lead to emergence or disappearance of falling segments with negative resistance or conductance and become one of the reasons for temporary failures of electron devices comprising the diode structures.