三次元スタック構造の半導体デバイスにおけるコンフォーマル成膜技術に関する研究:　第1報　回転霧化エアロゾルスプレーによるTSVの成膜方法の提案とその装置化

摘要

近年，半導体デバイスは小型化，高性能化，低コスト化のために，三次元スタック構造のパッケージ化の研究が進んでいる1-2）．三次元スタック構造の半導体デバイスは，TSV（Through-Silicon Via：シリコン貫通ビア）を層間電極とし，シリコンウエハもしくはチップ単位で素子を積層し，高密度化を図っている．図1にTSVを使用した三次元スタック構造のイメージセンサの製造プロセスの一例を示す．%Semiconductor devices are increasingly sophisticated in their application of three-dimensional laminated chips inside Through-Silicon Via (TSV). TSV is a technology that connects the stacked chips using through electrodes instead of higher integrated circuits densities. In this report, we described the invention of a new photo-resist coating method inside the TSV using the rotary atomizer aerosol spray. The characteristics of the flying droplets from the rotary atomizer aerosol nozzle have been measured by a Shadow Dopper Particle Analyzer (SDPA), and indicated that the new method is capable of coating the photo-resist inside the TSV. Furthermore, we have tried to manufacture the prototype coating system with the rotary atomizer aerosol nozzle and we have run the experiments in to coat the photo-resist inside the TSV Test Element Group (TEG) wafer. Results indicate that this method is able to uniformly coat the photo-resist along the shape of TSV.