机译:用于高电子迁移率晶体管应用的通过金属有机化学气相沉积法生长的GaN / AlGaN外延层的特性
Optoelectronic Devices Group, Central Electronics Engineering Research Institute, CEERI (Council of Scientific and Industrial Research, CSIR), Pilani, 333 031, India;
Optoelectronic Devices Group, Central Electronics Engineering Research Institute, CEERI (Council of Scientific and Industrial Research, CSIR), Pilani, 333 031, India;
Optoelectronic Devices Group, Central Electronics Engineering Research Institute, CEERI (Council of Scientific and Industrial Research, CSIR), Pilani, 333 031, India;
Electronic Science Department, Kurukshetra University, Kurukshetra, India;
Optoelectronic Devices Group, Central Electronics Engineering Research Institute, CEERI (Council of Scientific and Industrial Research, CSIR), Pilani, 333 031, India;
Gallium nitride; aluminium gallium nitride; high electron mobility transistors; metalorganic chemical vapour deposition; photoluminescence; high resolution X; ray diffraction;
机译:用于高电子迁移率晶体管应用的通过金属有机化学气相沉积法生长的GaN / AlGaN外延层的特性
机译:金属有机化学气相沉积法生长的GaN和AlGaN外延层的P型和N型掺杂
机译:AlGaN / GaN高电子迁移率晶体管金属有机化学气相沉积工艺中的原位化学传感,用于实时预测产品晶体质量和先进的工艺控制
机译:金属有机化学气相沉积法生长HgCdTe外延层的迁移谱分析
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:采用金属有机化学气相沉积法生长GaN中间层的alGaN基分布布拉格反射镜的应变管理