机译:快速系统测量晶圆600V的动态导通电阻,通常在硬开关应用条件下熄灭GaN Hemts
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
Infineon Technol Austria AG Siemenstr 2 A-9500 Villach Austria;
Infineon Technol Austria AG Siemenstr 2 A-9500 Villach Austria;
Infineon Technol Austria AG Siemenstr 2 A-9500 Villach Austria;
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
Univ Padua Dept Informat Engn Via Gradenigo 6-B I-35131 Padua Italy;
wide band gap semiconductors; III-V semiconductors; gallium compounds; electric resistance measurement; power HEMT; semiconductor device measurement; GaN high electron mobility transistors power devices; boost converter circuit; hard-switching conditions; hot electrons; dynamic RDSON behaviour; GaN-HEMT devices; on-wafer level dynamic properties; GaN-based power transistors; RDSON measurement time; dynamic on-resistance; normally off GaN HEMT; high electron mobility transistors; HEMT power device; field-activated trapping process; voltage 600; 0 V; GaN;
机译:用于电源开关应用的GaN-on-Si MIS-HEMT中的综合动态导通电阻评估
机译:使用GaN盖层改善AlInN / AlN / GaN HEMT的截止状态特性和动态导通电阻
机译:0.25-μmAlgan/ GaN HEMTS的失效机制的晶圆快速评估:侧壁拆卸的证据
机译:GaN晶体管中动态导通电阻的提取:在软开关和硬开关条件下
机译:具有低导通电阻的高压氮化镓HEMT,适用于开关应用。
机译:在SiNx钝化层中注入氟离子的高击穿电压和低动态导通电阻AlGaN / GaN HEMT
机译:快速系统测量晶圆600V的动态导通电阻,通常在硬开关应用条件下熄灭GaN Hemts