Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions

摘要

In this paper we present a new measurement technique for extracting dynamic on-resistance (Rdson) of GaN transistors. Dynamic Rdson of commercial GaN transistors in soft-switching and hard-switching conditions have been measured. By comparing the dynamic Rdson in both switching schemes, it is found that the off-state drain voltage stress is the main cause for the increase of dynamic Rdson, while the switching losses in the hard-switching transient could cause additional trapping and degradation, possibly due to channel hot electrons/phonons.