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Electron transport phenomena in plasma devices with E/spl times/B drift

机译:具有E / spl次/ B漂移的等离子设备中的电子传输现象

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A review of plasma devices involving electron drift in crossed electric and magnetic fields (E/spl times/B drift) and electron transport phenomena is presented. There are two important peculiarities of E/spl times/B system: possibility to maintain a large electric field in a quasi-neutral plasma which allows transport of relatively large intensity beam of charged particle and an efficient impact ionization due to closed electron drift. Several technological applications of devices based on electron drift in E/spl times/B field are under development, including plasma immersion ion implantation, energetic deposition of materials, magnetron sputtering, and plasma propulsion. Despite very different applications, the underlining physics of operation of these devices is very similar. One of the important physical phenomena is the electron transport across a magnetic field. Experimental and theoretical study reveals that electrons undergo anomalous transport and several possible mechanisms are proposed and studied previously. Anomalous electron transport mechanisms such as Bohm diffusion and near-wall conductivity are reviewed and assessed for two E/spl times/B devices, namely magnetron and Hall thruster. A modified model of the near-wall conductivity that takes into account various sheath effects is developed. It is shown that an axial electric field in the sheath can significantly affect the near wall conductivity.
机译:提出了一种等离子体器件的综述,该器件涉及在交叉电场和磁场中的电子漂移(E / spl次/ B漂移)和电子传输现象。 E / spl times / B系统有两个重要的特性:在准中性等离子体中维持较大电场的可能性,该电场允许传输相对较大强度的带电粒子束,以及由于封闭的电子漂移而产生有效的碰撞电离。基于E / spl times / B场中电子漂移的设备的几种技术应用正在开发中,包括等离子体浸没离子注入,材料的高能沉积,磁控溅射和等离子体推进。尽管有非常不同的应用,但这些设备的基本操作原理非常相似。重要的物理现象之一是电子在磁场中的传输。实验和理论研究表明,电子会经历异常传输,并且先前提出并研究了几种可能的机制。对于两个E / spl times / B装置,即磁控管和Hall推进器,对诸如Bohm扩散和近壁电导率之类的异常电子传输机制进行了评估。建立了考虑各种护套效应的近壁电导率修正模型。结果表明,护套中的轴向电场会显着影响近壁电导率。

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