State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide

Kelkar K.S.; Islam N.E.; Kirawanich P.; Fessler C.M.; Nunnally W.C.

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State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide

机译：补偿6-H碳化硅制成的大功率光电导开关的状态特性

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The ON-state characteristics of a 6-H silicon carbide (SiC) photoconductive switch with vertical geometry, transverse illumination, and linear-mode operation are presented. The switch is triggered by an optical source with a photon energy that is less tha

机译：提出了具有垂直几何形状，横向照明和线性模式操作的6-H碳化硅（SiC）光电导开关的导通状态特性。开关由光子能量小于tha的光源触发

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《IEEE Transactions on Plasma Science》 |2008年第1期|p.287-292|共6页
作者
Kelkar K.S.; Islam N.E.; Kirawanich P.; Fessler C.M.; Nunnally W.C.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类等离子体物理学;
关键词
photoconducting switches; power semiconductor switches; silicon compounds; wide band gap semiconductors; ON-state characteristics; SiC; bandgap energy; high-power photoconductive switch; linear-mode operation; low-power matching characteristics; n-layered PCSS; opt;

机译：光导开关;功率半导体开关;硅化合物;宽带隙半导体;导通特性;SiC;带隙能量;高功率光电导开关;线性模式操作;低功率匹配特性;n层PCSS;可选;

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1. ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide [J] . Kelkar K. S., Islam N. E., Kirawanich P., IEEE Transactions on Plasma Science . 2008,第1期

机译：补偿6-H碳化硅制成的大功率光电导开关的导通特性
2. Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering [J] . K. S. Kelkar, N. E. Islam, C. M. Fessler, Journal of Applied Physics . 2005,第9期

机译：碳化硅光电导开关，通过子带隙触发实现大功率，线性模式操作
3. Infrared photoconductivity via deep copper acceptors in silicon-doped, copper-compensated gallium arsenide photoconductive switches [J] . Roush R.A., Mazzola M.S. IEEE Transactions on Electron Devices . 1993,第6期

机译：掺硅，补偿铜的砷化镓镓光电导开关中深铜受体的红外光电导性
4. Breakdown characteristics of a silicon carbide photoconductive semiconductor switch triggered spark gap [C] . Takeshi Ihara, Daniel Mauch, James Dickens, IEEE International Conference on Plasma Sciences . 2016

机译：碳化硅光电导半导体开关的击穿特性触发了火花隙
5. Kinetics, processing, and properties of silicon/silicon carbide composites fabricated by reactive-melt infiltration. [D] . Zhou, Hong. 2001

机译：通过反应熔体渗透制备的硅/碳化硅复合材料的动力学，加工和性能。
6. Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter [O] . Myeong-Cheol Shin, Young-Jae Lee, Dong-Hyeon Kim, 2021

机译：利用射频溅射制备的UV /臭氧处理改善了氧化镓/ P-EPI碳化硅静态静态晶体管的电气特性
7. Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications [O] . S. Rakheja, L. Huang, Stefan Hau-Riege, 2020

机译：高功率和高频应用的碳化硅光电导电性能性能模型
8. 6H Silicon Carbide Photoconductive Switches for High Power Applications; Conference paper [R] . Nunnally, W. C., Islam, N., Kelkar, K., 2006

机译：用于高功率应用的6H碳化硅光电导开关;会议论文

State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide

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