A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses

摘要

The preexisting theoretical modeling of thermal breakdown in semiconductor devices under a single pulse is summarized, through which the relationship between failure power and pulsewidth, as well as the frequency can be obtained. In order to investigate the thermal accumulation effect in a semiconductor device under multiple pulses, the theoretical model of thermal breakdown affected by pulsewidth and pulse period is established in this article. The heat transfer equation is solved by Green's function method, and the error function is approximated. Then, the expressions of temperature in the defect including pulsewidth and pulse period are derived. The change rules of temperature in the defect and failure power versus pulse repetition frequency (PRF) are obtained and discussed. Meanwhile, the thermal accumulation effect as a function of PRF and duty cycle is analyzed.