Solid-State Bipolar Pulsed-Power Modulator Based on a Half-Bridge Power Cell Structure

摘要

This paper addresses the design of a solid-state bipolar pulsed-power modulator based on a series of stacked power cells that realize a simple and robust structure. Each cell is charged in parallel by an LCC resonant converter independently of the discharging loop. A passive cell-balancing design is implemented. The power cell using insulated gate bipolar transistors (IGBTs) can operate in bypass mode without an additional component, and the circuit operation was analyzed. A simple gate driving method, which provides synchronized gate signals without an extra power source of each gate driver using two control loops and isolation transformers, is implemented for the proposed bipolar pulsed-power modulator based on stacked cells. Moreover, an unexpected gate turn-on problem was solved by an additional off signal. To validate the proposed structure and the gate driving scheme, a three-cell, 1.2-kV, 110-A, 1.5- to 4-mu s, 3-kHz laboratory experimental prototype test was conducted. The results proved the reliability of the proposed solid-state bipolar pulsed-power modulator.