Magnetic-Field Induced Strains in Ferromagnetic Shape Memory Alloy Ni55Mn23Ga22 Deposited by RF-Magnetron Sputtering

摘要

>Abstract class="para">>1.5 µm–Ni55Mn23Ga22 ferromagnetic thin films were deposited onto silicon substrates and silicon single beam cantilever using radio-frequency magnetron sputtering. As-deposited sample and heat-treated thin films were studied on their silicon substrates and peeled off to determine the influence of the stress. Post-heat treatment process allows at the films to achieve the shape memory effect (SME). Vibrating sample magnetometer (VSM) and deflection measurement of the sample annealed at 873 K during 36 ks exhibit ferromagnetic martensitic structure with a typical SME response to the magnetic field induced strains which match the values of the bulk material.