机译:大面积大气压等离子增强CVD制成的高质量SiO2层:通过表面分析进行沉积工艺研究
Materials Innovation Institute (M2i) Mekelweg 2 P.O. Box 2008 2600 GA Delft The Netherlands Plasma and Materials Processing Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
Materials Innovation Institute (M2i) Mekelweg 2 P.O. Box 2008 2600 GA Delft The Netherlands Plasma and Materials Processing Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
FUJIFILM Manufacturing Europe B.V P.O. Box 90156 Tilburg The Netherlands;
FUJIFILM Manufacturing Europe B.V P.O. Box 90156 Tilburg The Netherlands;
Plasma and Materials Processing Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
Photonics and Semiconductor Nanophysics Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
Photonics and Semiconductor Nanophysics Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
Plasma and Materials Processing Group Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands;
atmospheric pressure glow discharges (APGD); atomic force microscopy (AFM); dielectric barrier discharges (DBD); films; hexamethyldisiloxane (HMDSO); roll-to-roll reactor;
机译:大面积大气压等离子增强CVD制成的高质量SiO_2层:通过表面分析进行沉积工艺研究
机译:大气压等离子体液体沉积和大气压等离子体增强化学气相沉积沉积的聚乙二醇薄膜:工艺,化学组成分析和生物相容性
机译:大气压辊对辊等离子体增强CVD的高质量二氧化硅样双层封装膜
机译:在微流体分配器设备中作为牺牲层的亚大气化学气相沉积(SACVD)O3-TEOS UGS,BPSG,PSG和等离子增强化学气相沉积(PECVD)PSG膜的研究
机译:大气压等离子体CVD工艺的设计,该工艺使用介电势垒放电沉积氮化硅薄膜。
机译:表面微放电冷大气压等离子加工普通房Cricket Acheta Domesticus粉末:抗微生物潜力和脂质质量保存
机译:大气压辊对辊等离子体增强CVD的高质量二氧化硅样双层封装膜
机译:使用Inline mW RpECVD(microWave远程等离子体增强化学气相沉积)系统进行连续siN(sub x)等离子体处理