首页> 外文期刊>Plasma processes and polymers >Deposition of Organosilicon Coatings by a Non- Equilibrium Atmospheric Pressure Plasma Jet: Design, Analysis and Macroscopic Scaling Law of the Process
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Deposition of Organosilicon Coatings by a Non- Equilibrium Atmospheric Pressure Plasma Jet: Design, Analysis and Macroscopic Scaling Law of the Process

机译:非平衡大气压等离子体射流沉积有机硅涂层:工艺的设计,分析和宏观尺度定律

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摘要

Silicon oxide based (SiO_xC_yH_Z) noted SiO_x) coatings are often used in surface engineering for microelectronics, corrosion resistance, barrier to gas permeation through polymeric materials, etc... SiO_x coatings can be efficiently deposited by non-equilibrium atmospheric pressure plasma processes, such as DBD or plasma jets. In the present study, the design of experiment (DoE) methodology was used to investigate the influence of process parameters on the characteristics of organosilicon coatings deposited by a non-equilibrium atmospheric pressure plasma jet (APPJ) from hexamethyldisiloxane (HMDSO) and air mixtures. The results obtained were used to create an empirical model to predict the chemical composition of coatings. Among 11 process parameters, the 3 parameters which exhibited the strongest effect on the coating composition were the torch speed, the substrate to nozzle distance and the number of scans. Auger spectroscopy revealed that the carbon content of the thin films was as low as 6 ±1.7% and AFM analysis showed that smooth coatings [R_a ~ 2nm) were obtained even at high dynamic growth rates (~1000nm-m-min~(-1)). A tentative macroscopic scaling law was also formulated to correlate our results with the available literature data.
机译:氧化硅基(SiO_xC_yH_Z,记为SiO_x)涂层通常用于微电子学的表面工程,耐腐蚀,阻隔聚合物材料渗透气体等。SiO_x涂层可通过非平衡大气压等离子体工艺有效沉积,例如作为DBD或等离子喷嘴。在本研究中,实验设计(DoE)方法用于研究工艺参数对六甲基二硅氧烷(HMDSO)和空气混合物的非平衡大气压等离子体射流(APPJ)沉积的有机硅涂层特性的影响。获得的结果用于创建经验模型以预测涂层的化学组成。在11个工艺参数中,对涂料组合物影响最大的3个参数是割炬速度,基材到喷嘴的距离和扫描次数。俄歇(Auger)光谱显示薄膜的碳含量低至6±1.7%,AFM分析表明,即使在高动态生长速率(〜1000nm-m-min〜(-1 ))。还制定了一个试探性的宏观尺度定律,以将我们的结果与现有文献数据联系起来。

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  • 来源
    《Plasma processes and polymers》 |2011年第7期|p.664-675|共12页
  • 作者单位

    LGPPTS, Chimie Paristech, UPMC - Universite Paris 6, Universite Pierre et Marie Curie, n rue Pierre et Marie Curie, 75231 Paris cedex I 05, France;

    LGPPTS, Chimie Paristech, UPMC - Universite Paris 6, Universite Pierre et Marie Curie, n rue Pierre et Marie Curie, 75231 Paris cedex I 05, France,Radiation Technology Development Division, BARC, Trombay, Mumbai 400085, India;

    LGPPTS, Chimie Paristech, UPMC - Universite Paris 6, Universite Pierre et Marie Curie, n rue Pierre et Marie Curie, 75231 Paris cedex I 05, France;

    Ricerca Scientifica e Tecnologica, PAM-SE, Bruno Kessler Foundation, Trento, Italy;

    Ricerca Scientifica e Tecnologica, PAM-SE, Bruno Kessler Foundation, Trento, Italy;

    LGPPTS, Chimie Paristech, UPMC - Universite Paris 6, Universite Pierre et Marie Curie, n rue Pierre et Marie Curie, 75231 Paris cedex I 05, France;

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