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Importance of interactions for the band structure of the topological Dirac semimetal Na_3Bi

机译:拓扑狄拉克半型NA_3BI的频带结构相互作用的重要性

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摘要

We experimentally measure the band dispersions of topological Dirac semimetal Na_3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na_3Bi thin films. We find that the velocities for the lowest-lying conduction and valence bands are 1.6 × 10~6 ms_(-1) and 4.2 × 10~5 ms~(-1) respectively, significantly higher than previous theoretical predictions. We compare the experimental band dispersions to the theoretical band structures calculated using an increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradient approximation (GGA). meta-GGA, Heyd-Scuseria-Emzerhof exchange-correlation functional (HSE06). and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronic structure of this Na_3Bi, and are likely the origin of the high velocity. The electron velocity is consistent with recent experiments on ultrathin Na_3Bi and also may explain the ultrahigh carrier mobility observed in heavily electron-doped Na_3Bi.
机译:我们通过傅里叶变换扫描隧道光谱法通过傅里叶变换扫描隧道光谱进行实验测量拓扑DIRAC半型NA_3BI的带分散体,对分子束外延生长的NA_3BI薄膜(001)表面上的图像Quasiparticle干扰。我们发现,最低说明的导通和价带的速度分别为1.6×10〜6 ms和4.2×10〜5ms〜(-1),显着高于以前的理论预测。我们将实验频带分散体与由相互作用的相互作用的近似的近似的近似的近似的理论带结构进行比较:广义梯度近似(GGA)。 Meta-GGA,Heyd-Scuseria-Emzerhof交换 - 相关功能(HSE06)。和GW方法。我们发现密度泛函理论方法通常低估了电子速度。然而,我们发现与越来越复杂的交换和相互作用潜力的描述显着改善了协议,与通过GW方法获得的实验合理一致。结果表明,交换相关效应对于确定该NA_3BI的电子结构很重要,并且很可能是高速的起源。电子速度与最近的超薄Na_3BI实验一致,并且还可以解释在重物中观察到的超高载流子迁移率。

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  • 来源
    《Physical review》 |2020年第4期|045124.1-045124.7|共7页
  • 作者单位

    Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies Monash University 3800 Clayton Victoria Australia School of Physics and Astronomy Monash University 3800 Clayton Victoria Australia;

    Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies Monash University 3800 Clayton Victoria Australia School of Physics and Astronomy Monash University 3800 Clayton Victoria Australia;

    Research Laboratory for Quantum Materials Singapore University of Technology and Design Singapore 487372 Singapore;

    School of Physical Science and Technology Soochow University Suzhou 215006 China;

    Research Laboratory for Quantum Materials Singapore University of Technology and Design Singapore 487372 Singapore;

    School of Physical Science and Technology Soochow University Suzhou 215006 China;

    Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies Monash University 3800 Clayton Victoria Australia School of Physics and Astronomy Monash University 3800 Clayton Victoria Australia Monash Centre for Atomically Thin Materials Monash University 3800 Clayton Victoria Australia;

    Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies Monash University 3800 Clayton Victoria Australia School of Physics and Astronomy Monash University 3800 Clayton Victoria Australia Monash Centre for Atomically Thin Materials Monash University 3800 Clayton Victoria Australia;

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